IXYS 60V TrenchT3 HiPerFET Power MOSFETs
IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ, can withstand a junction temperature up to 175°C, and are avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. In addition, the fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs help achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.
Features
Ultra low on-resistance RDS(on)High current handling capabilityAvalanche ratedFast body diode175°C operating temperatureInternational standard packagesTO-220TO-263TO-247
Applications
Off-line uninterruptible power supplies (UPS)DC-DC convertersBrushed/brushless DC motor drivesHigh-current switching power suppliesPrimary-side switchesElectric forkliftsLight electric vehicles (LEV)Cordless home appliances and power toolsUnmanned aerial vehicles (UAV)
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