IXYS IXRFSMPD N-Channel Enhancement Mode MOSFETs
IXYS IXRFSMPD N-Channel Enhancement Mode MOSFETs offer a power module in an isolated, surface-mounted outline, offering the advantages of flexibility, automated assembly, and reduced package size. With one a low height profile and a compact footprint, the IXRFSMPD MOSFETs fulfill the demand for total size reduction and facilitates system cost reduction requirements.
Features
Optimized For High-Speed SwitchingHigh Frequency CapableIsolated SubstrateHigh Isolation Voltage (>2500V)Excellent Thermal TransferIncreased Temperature and Power Cycling CapabilityLow Gate Charge and CapacitancesEasier to DriveFaster SwitchingLow RDS(On)Very Low Insertion Inductance (<2nh)No Beryllium Oxide (Beo) or Other Hazardous MaterialsEasy To Mount; No Insulators NeededHigh Power Density
Applications
Nanosecond SwitchingSwitch and Resonant Mode DC-DC ConvertersLaser Drivers
Documents
IXRFSM12N100 Datasheet
Ixys Newest
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Date: 2017-12-13IXYS IXRFSMPD N-Channel Enhancement Mode MOSFETs offer a power module in an isolated, surface-mounted outline, offering the advantages of flexibility, automated assembly, and reduced package size.
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Date: 2017-07-25
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